| 发明名称 |
SEMICONDUCTOR DEVICE, COMPOSITION FOR FORMING INSULATING FILM THEREFOR, SILICA-BASED FILM AND METHOD OF FORMING SAME, AND INTERCONNECT STRUCTURE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for film formation and a silica-based film which are suitably used for a semiconductor element, etc., and a forming method therefor. SOLUTION: The composition for forming an insulating film for a semiconductor device is cured by using heat and ultraviolet radiation. The device includes a hydrolysis-condensation product produced by hydrolysis and condensation of at least one silane compound selected from the group consisting of compounds shown by the following general formula (A), and at least one silane compound selected from the group consisting of compounds shown by the following general formula (B) and compounds shown by the following general formula (C); and an organic solvent. Here, the general formula (B) is (R<SP>9</SP>)<SB>a</SB>-Si-(OR<SP>10</SP>)<SB>4-a</SB>and the general formula (C) is R<SP>11</SP><SB>b</SB>(R<SP>12</SP>O)<SB>3-b</SB>Si-(R<SP>15</SP>)<SB>d</SB>-Si(OR<SP>13</SP>)<SB>3-c</SB>R<SP>14</SP><SB>c</SB>. COPYRIGHT: (C)2006,JPO&NCIPI
|
| 申请公布号 |
JP2006041052(A) |
申请公布日期 |
2006.02.09 |
| 申请号 |
JP20040216346 |
申请日期 |
2004.07.23 |
| 申请人 |
JSR CORP |
发明人 |
TSUCHIYA HAJIME;HATTORI SEITARO;AKIYAMA MASAHIRO;SHIODA ATSUSHI |
| 分类号 |
H01L21/316;H01L21/312;H01L21/768;H01L23/522 |
主分类号 |
H01L21/316 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
