发明名称 PHOTOMASK, FOCUS MEASURING METHOD USING THEREFOR, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a photomask enabling high precision focus measurement by decreasing load on mask manufacturing. <P>SOLUTION: The photomask PM1 includes a shading part shielding light, and first and second transmission parts transmitting light. The photomask comprises an asymmetric diffraction grating pattern 2 substantially satisfying that &theta; and n are 163&deg;&le;360&deg;/(n+2)&le;197&deg;, and a reference pattern 3 for obtaining images that is a reference when measuring shift of the image of the asymmetric diffraction grating, when an absolute value of a difference between a light phase of the first transmission part and the light phase of the second transmission part is &theta;(&ne;90&deg;) and the ratio of width of the shading part, the width of the first transmission part and the width of the second transmission part is n:1:1 (n: positive real number, other than 2). <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006039148(A) 申请公布日期 2006.02.09
申请号 JP20040217874 申请日期 2004.07.26
申请人 TOSHIBA CORP 发明人 NOMURA HIROSHI
分类号 G03F1/28;G03F1/68;G03F7/20;H01L21/027 主分类号 G03F1/28
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