| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a multilayered wiring structure in which interlayer adhesion properties are set well. <P>SOLUTION: In a semiconductor device 100, the multilayered wiring structure which contains a first interlayer insulating film 120 formed with a wiring 124 and a second interlayer insulating film 122 formed with a via 126 is formed on a semiconductor substrate (not shown). The semiconductor device 100 contains a circuit area 110 formed with the wiring 124 and the via 126, a seal ring area 112 formed with a seal ring for isolating the circuit area 110, and an outer peripheral area 114 formed in the outer periphery of the seal ring area 112. In the outer peripheral area 114, a dummy via 136 composed of a metal material is formed in the second interlayer insulating film 122. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
