| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation element for an electronic device that can evaluate the resistance dispersion of a specific structure within an electronic device for each formation position of the electronic device, and to provide its evaluation method. SOLUTION: An evaluation element 100, which evaluates the contact resistance dispersion within a flash memory 300's cell formed on a silicon wafer W, has a hole chain 20 containing a plurality of units, having a structure similar to a contact region in the cell to evaluate a resistance value between a first and second electrode pads 2a and 2b. Next, the resistance value between the first and third electrode pads 2a and 2c is evaluated, a resistance value between the first and the fourth pads 2a and 2d is evaluated, and then a resistance value between the first and fifth electrode pads 2a and 2e is evaluated. From the extent of the resistance value of a hole chain increased with respect to the number of units, the contact resistance dispersion inside a flash memory 300 cell can be found. COPYRIGHT: (C)2006,JPO&NCIPI
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