发明名称 Method of analyzing a buried layer in a wafer with a semiconductor component such as a DRAM chip uses electromagnetic radiation to penetrate the wafer
摘要 <p>A method of analyzing a buried layer (3) in a wafer with a semiconductor component comprises using electromagnetic radiation (9) that enters a recess (4) in the surface (2) and leaves through a second recess (5) after penetrating to a measuring section of the buried layer and is received (8) and evaluated. An independent claim is also included for a component, especially a semiconductor wafer, analyzed as above.</p>
申请公布号 DE102004034544(A1) 申请公布日期 2006.02.09
申请号 DE20041034544 申请日期 2004.07.16
申请人 INFINEON TECHNOLOGIES AG 发明人 REINIG, PETER;BLOESS, HARALD;GUITTET, PIERRE-YVES
分类号 B81C99/00;G01N21/95;H01L21/66;H01L21/8242 主分类号 B81C99/00
代理机构 代理人
主权项
地址