发明名称 |
Method of analyzing a buried layer in a wafer with a semiconductor component such as a DRAM chip uses electromagnetic radiation to penetrate the wafer |
摘要 |
<p>A method of analyzing a buried layer (3) in a wafer with a semiconductor component comprises using electromagnetic radiation (9) that enters a recess (4) in the surface (2) and leaves through a second recess (5) after penetrating to a measuring section of the buried layer and is received (8) and evaluated. An independent claim is also included for a component, especially a semiconductor wafer, analyzed as above.</p> |
申请公布号 |
DE102004034544(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
DE20041034544 |
申请日期 |
2004.07.16 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
REINIG, PETER;BLOESS, HARALD;GUITTET, PIERRE-YVES |
分类号 |
B81C99/00;G01N21/95;H01L21/66;H01L21/8242 |
主分类号 |
B81C99/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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