NITRIDE SEMICONDUCTOR SINGLE CRYSTAL INCLUDING Ga, METHOD FOR MANUFACTURING THE SAME, AND SUBSTRATE AND DEVICE USING THE CRYSTAL

摘要

A nitride semiconductor single crystal including Ga is characterized in that (a) the maximum reflectance measured by irradiating the nitride semiconductor single crystal with light having a wavelength of 450nm is 20% or less, and a difference between the maximum reflectance and the minimum reflectance is within 10% or (b) the ratio of the maximum value to the minimum value of dislocation density measured by a cathode luminescence method (maximum value/minimum value) is 10 or less and/or (c) a life measured by a time-resolved photoluminescence method is 95ps or more.