ELECTROSTATIC DISCHARGE PROTECTION STRUCTURES FOR HIGH SPEED TECHNOLOGIES WITH MIXED AND ULTRA-LOW VOLTAGE SUPPLIES
摘要
<p>An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry. In one embodiment, the ESD protection circuit includes a pad adapted for connection to a first voltage source of a protected circuit node of the IC, and a silicon controlled rectifier (SCR) having an anode adapted for coupling to the first voltage source, and a cathode adapted for coupling to a second voltage source. At least one capacitive turn-on device respectively coupled between at least one of a first gate of the SCR and the first voltage source, and a second gate of the SCR and the second voltage source.</p>
申请公布号
WO2006014875(A2)
申请公布日期
2006.02.09
申请号
WO2005US26332
申请日期
2005.07.25
申请人
SARNOFF CORPORATION;SARNOFF EUROPE BVBA;MERGENS, MARKUS, PAUL, JOSEF;RUSS, CORNELIUS, CHRISTIAN;ARMER, JOHN;VERHAEGE, KOEN, GERARD, MARIA
发明人
MERGENS, MARKUS, PAUL, JOSEF;RUSS, CORNELIUS, CHRISTIAN;ARMER, JOHN;VERHAEGE, KOEN, GERARD, MARIA