| 摘要 |
<P>PROBLEM TO BE SOLVED: To simultaneously produce fine lines of an isolated space pattern with an isolated line pattern or with a dense pattern. <P>SOLUTION: After a desired pattern is inputted to a computer used for producing mask data, the inside diameter of an outline shifter is estimated to generate an outline shifter. Then an aperture pattern is set to a CD control pattern so as to set a target pattern aimed at a desired pattern, and a semi-shielding portion and a phase shifter are determined. Then the dimension of a resist pattern is predicted by simulation taking into consideration the optical principles, developing the characteristics of the resist or the like. Whether the dimensions of the predicted pattern coincide with the dimensions of the desired target pattern is checked. If the dimensionss do not coincide, the CD control pattern is deformed, based on the difference between the predicted dimension and the desired dimension of the pattern, and thereby, the mask pattern is deformed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
