| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage element of a structure which can easily be manufactured with high density. <P>SOLUTION: Recording layers 2 and 3 are installed between two electrodes 1 and 4, and potentials different in polarity are applied to the two electrodes 1 and 4. Thus, a memory cell is composed of resistance change elements 10 where resistance values of the recording layers 2 and 3 reversibly change. In a plurality of adjacent memory cells, the storage elements where at least a part of the layers 2 and 3 constituting the recording layers of the resistance change elements 10 is formed by the same layer in common is constituted. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
