| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a DRAM of a semiconductor device in which leakage current and refresh characteristics are improved, and to provide a method of manufacturing the same. <P>SOLUTION: The DRAM comprises a semiconductor substrate 100 which includes a first region 1000a including a cell region and a second region 1000b in which a pMOS region 140 and an nMOS region 150 are formed, a stacked structure of a lower-part gate oxide film 200 and an intermediate gate insulating film 210 which includes electron/positive-hole traps, formed on at least an upper part of the first region 1000a of the semiconductor substrate 100, an upper-part gate oxide film 230 formed on the upper part of the intermediate gate insulating film 210 and on at least the upper part of the nMOS region 150 of the semiconductor substrate 100, stacked structures 240, 250 of gate electrode patterns, and channel regions 160, 170, 180 formed under the gate electrodes in the semiconductor substrate 100. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
