发明名称 POWER SUPPLY WIRING STRUCTURE, SEMICONDUCTOR INTEGRATED CIRCUIT PROVIDED THEREWITH, POWER SUPPLY WIRING METHOD AND SEMICONDUCTOR INTEGRATED CIRCUIT DESIGNING METHOD USING THE METHOD
摘要 PROBLEM TO BE SOLVED: To provide a power supply wiring structure which can restrain generation of electromigration. SOLUTION: The power supply wiring structure is provided with a first power supply wiring 1010 and a second power supply wiring 1030 which are wiring layers different with each other. Both power supply sets of wiring 1010 and 1030 are electrically connected through a via 1060 in the crossing regions thereof. A third power supply wiring 1070 is constituted by extending the second power supply wiring 1030 in the wiring direction 1020 of the first power supply wiring 1010 from the crossing regions. Moreover, the first and third power supply sets of wiring 1010, 1070 are electrically connected with the via 1060. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006041016(A) 申请公布日期 2006.02.09
申请号 JP20040215606 申请日期 2004.07.23
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TAKAHATA ATSUSHI
分类号 H01L21/82;H01L21/3205;H01L23/52 主分类号 H01L21/82
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