| 摘要 |
PROBLEM TO BE SOLVED: To provide a long life purple-blue semiconductor laser device that uses a nitride semiconductor laser, for low threshold current and high output operation. SOLUTION: An n-type GaN layer 2, n-type AlGaN clad layer 3, first n-type GaN guide layer 4, and p-type AlGaN block layer 6 (current blocking layer) are sequentially formed on a GaN substrate 1. A stripe-like opening is formed at a part of the p-type AlGaN block layer 6, with a second n-type GaN guide layer 5 being formed to cover the opening. Over them, an InGaN multiple quantum well active layer 7, undope GaN guide layer 8, p-type AlGaN electron barrier layer 9, p-type AlGaN clad layer 10, and p-type GaN contact layer 11 are sequentially formed. COPYRIGHT: (C)2006,JPO&NCIPI
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