| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with high fuse reliability, where a metal fuse connected to a wiring layer can easily be formed, a fusing face of the metal fuse after fusing is not exposed and oxidation of the fuse due to exposure of the fusing face can be prevented. SOLUTION: The semiconductor device has adjacent metal fuses 3 and 4 and is provided with a plurality of wiring layers 1a, 1b, 2a and 2b, where one metal fuse 3 is fused. The device is provided with electrode pads 5 and 6 which are arranged between the wiring layers 1a and 1b and 2a and 2b, which are to be connected in the metal fuses 3 and 4, and which have barrier metals 7a, 7b, 8a and 8b on both sides of a fuse forming region between the wiring layers, an embedded film 9 embedded between the barrier metals 7a and 7b and between 8a and 8b and hollows 10 formed in the embedded film 9 in the fuse forming regions between the barrier metals 7a and 7b and between 8a and 8b by the embedded film 9. The metal fuses 3 and 4 are embedded in the hollows 10. COPYRIGHT: (C)2006,JPO&NCIPI
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