| 摘要 |
PROBLEM TO BE SOLVED: To provide a fabrication method for a top emission type organic EL device, which endows the top emission type organic EL device with high heat dissipation from a substrate, does not cause deterioration of an organic EL layer, can form an ITO layer as a second electrode and continuously a passivation layer on it, and can form an insulator layer on a substrate surface. SOLUTION: The fabrication method for the top emission type organic EL device has: a first step for preparing a metal base made of an alloy containing magnesium, or aluminum, or the two, and forming the insulator layer on a surface of the metal base to make a metal substrate; a second step for forming a plurality of first electrodes; a third step for forming the organic EL layer; a fourth step for forming the second electrode by using a facing targets spattering (FTS) apparatus and indium tin oxide (ITO) as the targets; and a fifth step for continuously forming the passivation layer made of oxidation silicon nitride on the second electrode by replacing the indium tin oxide (ITO) as the targets with silicon and blowing oxygen gas and nitrogen gas mixed at specified partial pressures of each other; in this order. COPYRIGHT: (C)2006,JPO&NCIPI
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