发明名称 MEMS device with non-standard profile
摘要 A method of producing a MEMS device forms structure on a non-standard device wafer. To that end, the method provides the noted non-standard device wafer, which has a wafer outer diameter and a non-standard thickness. As known by those in the art, a standard device wafer has a standard thickness when its outer diameter equals the wafer outer diameter. In illustrative embodiments, however, the non-standard thickness is smaller than the standard thickness. The method then forms structure on the non-standard device wafer.
申请公布号 US2006027885(A1) 申请公布日期 2006.02.09
申请号 US20040914575 申请日期 2004.08.09
申请人 MARTIN JOHN R;FELTON LAWRENCE E 发明人 MARTIN JOHN R.;FELTON LAWRENCE E.
分类号 H01L29/84;B81C1/00;H01L21/46 主分类号 H01L29/84
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