METHOD OF EVALUATING QUALITY OF SILICON SINGLE CRYSTAL

摘要

In the crystal growth rate (V), there is such a permissible zone that the given quality of silicon single crystal can be maintained. This permissible zone is determined in advance. The log data of crystal growth rate (V) is measured in the pulling up of silicon single crystal, and using the log data, the actual value of crystal growth rate (V) is determined. The actual value is compared with the permissible zone. Any region of silicon single crystal corresponding to crystal growth rate (V) falling within the permissible zone is judged as being a conforming region satisfying given standards, while any region of silicon single crystal corresponding to crystal growth rate (V) falling outside the permissible zone is judged as being a defective region not satisfying given standards.