| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which the warpage of a photovoltaic cell can be suppressed. <P>SOLUTION: First, a photovoltaic cell 1 provided with an n-type semiconductor layer 3 and a semiconductor substrate 2 is formed. A main surface electrode 4 is formed on the surface of a side for receiving a solar light of the photovoltaic cell 1 by printing method, vapor phase method, or sputtering method or the like. An interconenctor 6 is connected with a main surface electrode 4 to pick up the generated electric power. Next, a rear electrode 5 is formed on the opposite-side surface of the incident side in the photovoltaic cell 1 by the printing method, vapor phase method or plating method. Thus, a semiconductor device provided with a CIC type photovoltaic cell is completed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
