| 摘要 |
Enhanced passgate structures for use in low-voltage systems are presented in which the operational speed of the passgate structures is maximized, while minimizing leakage current when the structure is turned "OFF." In one arrangement, the V<SUB>T </SUB>of the pass-gate structures is increased relative to the V<SUB>T </SUB>of other transistors fabricated according to a particular process dimension. In addition, a passgate activation voltage is applied to the passgate structures such that the passgate activation voltage is higher in voltage than a nominal voltage being supplied to circuitry other than the passgate structures.
|
