摘要 |
<p>A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn,Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.</p> |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;UNIVERSITAET BREMEN;MURAI, AKIHIKO;MCCARTHY, LEE;MISHRA, UMESH, K.;DENBAARS, STEVEN, P.;KRUSE, CARSTEN;FIGGE, STEPHAN;HOMMEL, DETLEF |
发明人 |
MURAI, AKIHIKO;MCCARTHY, LEE;MISHRA, UMESH, K.;DENBAARS, STEVEN, P.;KRUSE, CARSTEN;FIGGE, STEPHAN;HOMMEL, DETLEF |