发明名称 |
Inspection apparatus and method for inspecting a resist pattern |
摘要 |
The imaging magnification of an imaging optical system 6 is set such that the image resolution of an ultraviolet CCD camera 5 is within a range from 10 nm to 30 nm, on a resist pattern 102 to be inspected. In addition, every time when the ultraviolet CCD camera 5 picks up an image, the resist pattern 102 to be inspected is irradiated at an irradiation light amount within a range from 0.5 mJ/cm<2> to an irradiation threshold value at which the resist pattern 102 is not caused to contract or an irradiation threshold value at which an absorption rate of an anti-reflection film provided near the resist pattern is not caused to change. <IMAGE> |
申请公布号 |
EP1106994(B1) |
申请公布日期 |
2006.02.08 |
申请号 |
EP20000125362 |
申请日期 |
2000.11.30 |
申请人 |
SONY CORPORATION |
发明人 |
IMAI, YUTAKA;TAGUCHI, AYUMU;TAMADA, HITOSHI;WADA, HIROYUKI |
分类号 |
G01B11/24;G01N21/956;G01N21/88;G03F7/20;G03F7/26;H01L21/027;H01L21/66 |
主分类号 |
G01B11/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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