发明名称 Inspection apparatus and method for inspecting a resist pattern
摘要 The imaging magnification of an imaging optical system 6 is set such that the image resolution of an ultraviolet CCD camera 5 is within a range from 10 nm to 30 nm, on a resist pattern 102 to be inspected. In addition, every time when the ultraviolet CCD camera 5 picks up an image, the resist pattern 102 to be inspected is irradiated at an irradiation light amount within a range from 0.5 mJ/cm<2> to an irradiation threshold value at which the resist pattern 102 is not caused to contract or an irradiation threshold value at which an absorption rate of an anti-reflection film provided near the resist pattern is not caused to change. <IMAGE>
申请公布号 EP1106994(B1) 申请公布日期 2006.02.08
申请号 EP20000125362 申请日期 2000.11.30
申请人 SONY CORPORATION 发明人 IMAI, YUTAKA;TAGUCHI, AYUMU;TAMADA, HITOSHI;WADA, HIROYUKI
分类号 G01B11/24;G01N21/956;G01N21/88;G03F7/20;G03F7/26;H01L21/027;H01L21/66 主分类号 G01B11/24
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