| 发明名称 |
HIGH POWER ALInGaN BASED MULTI-CHIP LIGHT EMITTING DIODE |
| 摘要 |
A method for fabricating a light emitting diode chip, the method comprising forming the light emitting diode chip so as to have an aspect ratio which defines an elongated geometry. |
| 申请公布号 |
EP1623450(A2) |
申请公布日期 |
2006.02.08 |
| 申请号 |
EP20040752049 |
申请日期 |
2004.05.11 |
| 申请人 |
ELITE OPTOELECTRONICS, INC. |
发明人 |
LIU, HENG |
| 分类号 |
F21L4/02;H01L25/075;H01L33/20;H01L33/46;H01L33/60 |
主分类号 |
F21L4/02 |
| 代理机构 |
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代理人 |
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