发明名称 |
USE OF SPIN-ON, PHOTOPATTERNABLE, INTERPLAYER DIELECTRIC MATERIALS AND INTERMEDIATE SEMICONDUCTOR DEVICE STRUCTURE UTILIZING THE SAME |
摘要 |
<p>A cap layer that enables a photopatternable, spin-on material to be used in the formation of semiconductor device structures at wavelengths that were previously unusable. The photopatternable, spin-on material is applied as a layer to a semiconductor substrate. The cap layer and a photoresist layer are each formed over the photopatternable layer. The cap layer absorbs or reflects radiation and protects the photopatternable layer from a first wavelength of radiation used in patterning the photoresist layer. The photopatternable, spin-on material is convertible to a silicon dioxide-based material upon exposure to a second wavelength of radiation.</p> |
申请公布号 |
EP1623273(A2) |
申请公布日期 |
2006.02.08 |
申请号 |
EP20040751894 |
申请日期 |
2004.05.11 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LI, WEIMIN;SANDHU, GURTEJ, S. |
分类号 |
G03F7/075;G03F7/095;H01L21/02;H01L21/311;H01L21/312;(IPC1-7):G03F7/004;H01L21/316;H01L21/768;G03F7/09 |
主分类号 |
G03F7/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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