| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resist material having satisfactory resolving power and sensitivity, a small line edge roughness and superior dry etching resistance by incorporating a high molecular compound comprising a dendric-polymer (dendrimer) or a hyper-branched polymer of a phenol derivative and having a specified weight average molecular weight as a base polymer. SOLUTION: The resist material contains a high molecular compound comprising a dendric-polymer (dendrimer) or a hyper-branched polymer of a phenol derivative and having a weight average molecular weight of 500-10,000,000 as a base polymer. The high molecular compound comprises repeating units of formula I and/or repeating units of formula II and repeating units of formula III. In the formulae I and II, R1 is H or methyl, plural symbols R2 are mutually the same or different and each a 1-30C linear, branched or cyclic alkyl or the like, R3 is OR4, (x) is 0 or a positive integer, (y) is a positive integer and x+y<=5. In the formula III, X is a single bond, branched alkylene or the like. |
