METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH STACKED ANALOG COMPONENTS IN BACK END OF LINE (BEOL) REGIONS

摘要

A method for making a semiconductor device may include forming a first dielectric layer above a semiconductor substrate, forming a first trench in the first dielectric layer, filling the first trench with electrically conductive material, removing upper portions of the electrically conductive material to define a lower conductive member with a recess thereabove, forming a filler dielectric material in the recess to define a second trench. The method may further include filling the second trench with electrically conductive material to define an upper conductive member, forming a second dielectric layer over the first dielectric layer and upper conductive member, forming a first via through the second dielectric layer and underlying filler dielectric material to the lower conductive member, and forming a second via through the second dielectric layer to the upper conductive member.

主权项

1. A device, comprising:
a substrate; a plurality of active circuit regions in the substrate; a first dielectric layer on the substrate and on the plurality of active circuit regions; a first opening in the first dielectric layer; a first conductive layer in the first opening; a second dielectric layer on the first dielectric layer and on the first conducive layer in the first opening; a second opening in the second dielectric layer; a second conductive layer in the second opening; and a third dielectric layer on the second dielectric layer and on the second conductive layer, the first conductive layer being separated from the third dielectric layer by the second dielectric layer.