发明名称 REACTOR SURFACE PASSIVATION THROUGH CHEMICAL DEACTIVATION
摘要 <p>Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on the reaction space surface(s). A pre-treatment step can maximize the available reactive sites prior to the treatment step. With reactive sites deactivated by adsorbed treatment reactant, during subsequent processing the reactant gases have reduced reactivity or deposition upon these treated surfaces. Accordingly, purge steps can be greatly shortened and a greater number of runs can be conducted between cleaning steps to remove built-up deposition on the reactor walls.</p>
申请公布号 EP1623454(A2) 申请公布日期 2006.02.08
申请号 EP20040750869 申请日期 2004.04.29
申请人 ASM AMERICA, INC. 发明人 VERGHESE, MOHITH;SHERO, ERIC, J.
分类号 C23C16/40;C23C16/44;C23C16/455;C23C22/68;C30B25/14;(IPC1-7):H01L21/285;C30B25/00 主分类号 C23C16/40
代理机构 代理人
主权项
地址