| 摘要 |
<p>A solvent-resistant and carrier-selective high-resistance film 3 is formed between a radiation sensitive type amorphous semiconductor thick film 7, and a voltage application electrode 2 in such a manner as to cover the entire surface of the amorphous semiconductor thick film. Moreover, an insulating auxiliary plate member 5 having a thermal expansion coefficient, which is comparable to that of an insulating substrate, is formed on the surface of the top layer, in which the amorphous semiconductor thick film, the solvent-resistant and carrier-selective high-resistance film, and the voltage application electrode are formed, and fixed thereonto by using a high-withstand-voltage hardening synthetic resin 4 in such a way as to cover the surface of the top layer.
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