Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions

摘要

Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions are described. In one embodiment, a capacitor storage node is formed having an uppermost surface and an overlying insulative material over the uppermost surface. Subsequently, a capacitor dielectric functioning region is formed discrete from the overlying insulative material operably proximate at least a portion of the capacitor storage node. A cell electrode layer is formed over the capacitor dielectric functioning region and the overlying insulative material.