发明名称 Method to remove copper without pattern density effect
摘要 A new method is provided that allows for the application of electropolish for removal of copper and that is independent of pattern density of the removed copper. Electropolish of the copper is first accomplished by reversing current in the H<SUB>2</SUB>SO<SUB>4 </SUB>or H<SUB>3</SUB>PO<SUB>4 </SUB>solution. After identifying the endpoint of the electropolish, chemical etching of the copper in a H<SUB>2</SUB>SO<SUB>4 </SUB>or H<SUB>3</SUB>PO<SUB>4 </SUB>solution is continued, in this manner avoiding effects of high current density introduced by pattern density.
申请公布号 US6995089(B2) 申请公布日期 2006.02.07
申请号 US20030434741 申请日期 2003.05.08
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHOU SHIH-WEI;TSAI MINGHSING;SHUE WINSTON
分类号 H01L21/302;B23H5/08;C23F1/18;C25F3/02;H01L21/321;H01L21/3213;H01L21/461;H01L21/768;H05K3/06;H05K3/07;H05K3/10 主分类号 H01L21/302
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