发明名称 |
Method to remove copper without pattern density effect |
摘要 |
A new method is provided that allows for the application of electropolish for removal of copper and that is independent of pattern density of the removed copper. Electropolish of the copper is first accomplished by reversing current in the H<SUB>2</SUB>SO<SUB>4 </SUB>or H<SUB>3</SUB>PO<SUB>4 </SUB>solution. After identifying the endpoint of the electropolish, chemical etching of the copper in a H<SUB>2</SUB>SO<SUB>4 </SUB>or H<SUB>3</SUB>PO<SUB>4 </SUB>solution is continued, in this manner avoiding effects of high current density introduced by pattern density.
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申请公布号 |
US6995089(B2) |
申请公布日期 |
2006.02.07 |
申请号 |
US20030434741 |
申请日期 |
2003.05.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHOU SHIH-WEI;TSAI MINGHSING;SHUE WINSTON |
分类号 |
H01L21/302;B23H5/08;C23F1/18;C25F3/02;H01L21/321;H01L21/3213;H01L21/461;H01L21/768;H05K3/06;H05K3/07;H05K3/10 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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