发明名称 Method for manufacturing a semiconductor wafer
摘要 A method for forming a semiconductor wafer such as a standard semiconductor wafer used in a surface analysis system. Openings may be formed by partially etching a semiconductor substrate, and an insulation film may be formed on the openings. Contact holes may be formed to expose portions of the semiconductor substrate and the insulation film in the openings. The contact holes may be inspected by the surface analysis system, and the reliability of data obtained from the surface analysis system may be more precisely discriminated.
申请公布号 US6995074(B2) 申请公布日期 2006.02.07
申请号 US20030393015 申请日期 2003.03.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM DEOK-YONG
分类号 H01L21/66;H01L21/76;H01L23/544 主分类号 H01L21/66
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