发明名称 |
Method for forming multi-layer wiring structure |
摘要 |
For suppressing decomposition of an organic group (for example, a CH<SUB>3 </SUB>group) which is bonded to an Si atom of an organic SOG film for use in a flattening process at the time of an ashing process, there is provided a method comprising the steps of: forming an organic SOG layer directly on a lower wiring layer or on a predetermined film including a hillock protection layer which is formed on the lower wiring layer in advance; forming an upper wiring layer on the organic SOG layer without using an etching back process; forming a via hole through an etching process by using a patterned resist layer provided on the upper wiring layer as a mask; performing an ashing process with a plasma by making ions or radicals which are induced from oxygen gas as a main reactant, under an atmospheric pressure ranging from 0.01 Torr to 30.0 Torr; and filling said via hole with a conductive material so as to electrically connect the lower wiring layer to the upper wiring layer.
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申请公布号 |
US6995096(B2) |
申请公布日期 |
2006.02.07 |
申请号 |
US20040782084 |
申请日期 |
2004.02.19 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
IIDA HIROYUKI;OHBUCHI KAZUTO;MATSUSHITA ATSUSHI;HAGIWARA YOSHIO |
分类号 |
H01L21/31;H01L21/311;H01L21/312;H01L21/316;H01L21/768 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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