| 摘要 |
A semiconductor memory device having a transistor and a capacitor electrically connected to the transistor, the semiconductor memory device comprising: a first interlayer insulation film covering said transistor; a metallic cell contact passing through said first interlayer insulation film, said cell contact being electrically connected to said transistor; at least one interlayer insulation film located above said first interlayer insulation film; a capacitor located above said first interlayer insulation film; and a capacitor contact passing through said at least one interlayer insulation film, said capacitor contact electrically connecting said capacitor with said cell contact.
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