发明名称 Method of manufacturing semiconductor device
摘要 A method of manufacturing a semiconductor device includes preparing a semiconductor wafer including a first main surface having a semiconductor device forming region and a peripheral region, and a second main surface; preparing first and second dies defining a cavity; holding the semiconductor wafer by the first die so that the first main surface is exposed; placing a film member on the second die; supplying a predetermined amount of resin to a predetermined region on a resin layout region of the film member; heating the first die and the second die; bringing the first die and the second die into contact with each other through the film member to form the cavity, thereby the first main surface and the resin are placed in the cavity; and pressure-reducing the interior of the cavity and reducing the capacity of the cavity to cause the molten resin obtained by melting the resin to contact the first main surface, thereby forming an encapsulating portion on the first main surface.
申请公布号 US6995038(B2) 申请公布日期 2006.02.07
申请号 US20040892269 申请日期 2004.07.16
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 EGAWA YOSHIMI;SUGAI AKIRA
分类号 H01L21/50;H01L23/12;H01L21/44;H01L21/56;H01L23/31 主分类号 H01L21/50
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