发明名称 |
Thin film transistor and fabrication method for same |
摘要 |
A thin film transistor and a method for fabricating the same. The thin film transistor comprises a substrate and a patterned semiconductive layer formed on the substrate, wherein the semiconductive layer comprises a channel region and doped regions adjacent to the channel region. A gate insulating layer is formed on the above structure. A gate electrode is located on the gate insulating layer above the channel region. Source and drain electrodes are located on the gate insulating layer adjacent to the semiconductive layer. A dielectric layer having contact holes is formed on the above structure and a patterned conductive layer is formed on predetermined parts of the dielectric layer electrically connecting the doped regions to the source and drain electrode through the contact holes. |
申请公布号 |
US6995050(B2) |
申请公布日期 |
2006.02.07 |
申请号 |
US20040975470 |
申请日期 |
2004.10.29 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
CHEN CHEN-MING;WU YUNG-FU |
分类号 |
G02F1/1368;H01L21/00;H01L21/28;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/417;H01L29/423;H01L29/49;H01L29/786;H01L51/50 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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