发明名称 Memory device and method for storing and reading data in a write-once memory array
摘要 The preferred embodiments described herein provide a memory device and method for storing and reading data in a write-once memory array. In one preferred embodiment, a plurality of bits representing data is inverted and stored in a write-once memory array. When the inverted plurality of bits is read from the memory array, the bits are inverted to provide the data in its original, non-inverted configuration. By storing data bits in an inverted form, the initial, un-programmed digital state of the memory array is redefined as the alternative, programmed digital state. Other preferred embodiments are provided, and each of the preferred embodiments described herein can be used alone or in combination with one another. For example, the embodiments in which data bits are inverted can be used alone or in combination with the embodiments in which data is redirected.
申请公布号 US6996660(B1) 申请公布日期 2006.02.07
申请号 US20010877720 申请日期 2001.06.08
申请人 MATRIX SEMICONDUCTOR, INC. 发明人 MOORE CHRISTOPHER S.;SCHNEIDER JAMES E.;TRINGALI J. JAMES;MARCH ROGER W.
分类号 G11C7/00;G11C11/34 主分类号 G11C7/00
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