发明名称 |
METHODS OF FORMING PHASE CHANGE MEMORY DEVICES |
摘要 |
<p>A phase changeable memory element is formed by conformally forming a phase changeable material film in a contact hole on a substrate so as to create a void in the phase changeable material film in the contact hole. The void is at least partially closed by impinging a laser beam on the phase changeable material film sufficiently to reflow the phase changeable material film in the void.</p> |
申请公布号 |
KR20060012182(A) |
申请公布日期 |
2006.02.07 |
申请号 |
KR20040060931 |
申请日期 |
2004.08.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HORII HIDEKI |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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