| 摘要 |
The process involves breaking down an insulator oxide layer of a substrate below an active zone of a structure that links active zone (31) to a metallic line, by submitting the line to a focused metallic beam. An electric link is created between another metallic line and the former line. A semiconductor device having the latter line is processed by the ion beams and the electric link between the metallic lines is opened. An Independent claim is also included for a semi-conductor device established at a surface of an insulating silicon substrate. |
