| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces a thinning phenomenon that occurs in forming a tunnel oxide film and secures a sufficient gap-filling margin in forming a floating gate while performing a self-alignment process and can be obtained by implementing simple processes, and a manufacturing method therefor. SOLUTION: A semiconductor device comprises: an element isolation film 12 which fills a trench 11 in a substrate 10 and has a recess pattern 12a in the center of the surface, a tunnel oxide film pattern 14 which is formed on the portion of the substrate 10 excluding the element isolation film 12, a first gate electrode 18 which is formed on the tunnel oxide film pattern 14 and on the element isolation film 12 and partially exposes the element isolation film 12, a dielectric film 20 which is continuously formed on the surface of the first gate electrode 18 and on the surface of the element isolation film 12, and a second gate electrode 22 made of a third conductive material, which is formed on a resultant structure having the dielectric film 20. COPYRIGHT: (C)2006,JPO&NCIPI
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