NITRIDE SEMICONDUCTOR DEVICE

摘要

Disclosed is a nitride semiconductor light-emitting device composed of a silicon substrate (1), a main semiconductor region (3) arranged thereon and having a light-emitting function, and a p-type semiconductor layer (8) arranged on the main semiconductor region (3). The main semiconductor region (3) is composed of an n-type semiconductor layer (6), an active layer (7) and a p-type semiconductor layer (8). A light-transmitting electrode (10) is composed of an Ag alloy. An additive element is mixed in the Ag alloy for the light-transmitting electrode (10) for suppressing oxidation or sulfuration. The Ag alloy mixed with the additive element is high in stability and excellent in light transmittance and ohmic properties.