| 摘要 |
<p>A semiconductor device comprising a memory cell array including memory cells for storing data, a reference circuit for determining a reference level using a reference cell, and a circuit for comparing the data in the memory cell with the reference level. The reference circuit includes a circuit section connected with the reference cell for shifting the reference level. The circuit section comprises a diode connected with the source of the reference cell, and a switch transistor connected in parallel with the diode and controlled to turn on/off. A plurality of threshold voltages can thereby be realized using one transistor for reference cell by shifting the threshold voltage of the reference cell.</p> |
