发明名称 |
MASK FOR MAKING POLYSILICON, METHOD OF MAKING THE SAME, AND METHOD OF MAKING THIN FILM TRANSISTOR USING THE SAME |
摘要 |
<p>A mask for making a polysilicon structure includes a transmitting area that transmits light and a blocking area that has a metal layer and a semiconductor layer deposited in an alternating manner at least once. The blocking area blocks light. The mask is subject to less thermal stress from the light (e.g., a laser beam) and therefore has a longer life span compared to a conventional mask.</p> |
申请公布号 |
KR20060010560(A) |
申请公布日期 |
2006.02.02 |
申请号 |
KR20040059308 |
申请日期 |
2004.07.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DONG BYUM |
分类号 |
G02F1/13 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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