| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element effectively reflecting the light traveling to the opposite direction of an exit surface to increase a luminous efficiency. <P>SOLUTION: The light emitting element 10 comprises a GaN buffer layer 12, an n-GaN clad layer 13, an InGaN light emitting layer 14 having a multiquantum well structure (MQW), a p-AlGaN clad layer 15 showing a p-type conductivity, and a p-GaN contact layer 16, each stacked on a Ga<SB>2</SB>O<SB>3</SB>substrate 11 showing an n-type conductivity comprising a β-Ga<SB>2</SB>O<SB>3</SB>single crystal. A plurality of n-electrodes 18 partially formed at a plurality of places of the lower surface of the Ga<SB>2</SB>O<SB>3</SB>substrate 11 and a reflecting layer 19 for reflecting luminous light to the part without the n-electrodes 18 are formed. The light traveling from the InGaN light emitting layer 14 to the Ga<SB>2</SB>O<SB>3</SB>substrate 11 is reflected by the reflecting layer 19 and the n-electrodes 18. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
