| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern to stably form a fine pattern with high accuracy and excellent in roughness, etching durability, sensitivity and resolution, and to provide a medium for post exposure baking on applying an electric field effective for the method. <P>SOLUTION: The method for forming a fine pattern having high sensitivity is carried out by using a chemically amplified positive resist or a chemically amplified negative resist. The method includes steps of forming a resist film 11 comprising the chemically amplified positive resist or chemically amplified negative resist on a substrate 10, irradiating the resist film 11 with radiation to produce an acid, disposing a medium 12 satisfying the following conditions (I), (II) on the resist film on heating the film after irradiation with radiation, and applying an electric field on the resist film 11. The conditions are: (I) the medium has ≥0.01 μS/cm electric conductivity; and (II) the medium has low dissolving property with the resist film and when the medium is left to stand at 23°C for 60 seconds and removed with water, it satisfies (the resist film thickness after removing with water)/(the resist film thickness before the medium is deposited)×100≥95. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
