| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element, which has little inhibition of epitaxial growth of a semiconductor film. SOLUTION: A Ga<SB>2</SB>O<SB>3</SB>substrate formed ofβ-Ga<SB>2</SB>O<SB>3</SB>single crystal is prepared (step 1). The Ga<SB>2</SB>O<SB>3</SB>substrate is immersed in boiling nitric acid and it is etched for prescribed time (step 2). The Ga<SB>2</SB>O<SB>3</SB>substrate is ultrasonic-cleaned by using ethanol (step 3). Ultrasonic cleaning (step 4) using ultrapure water is performed and the substrate is dried (step 5). A streak image is observed by a reflective high-speed electron diffraction (RHEED) method. A surface of the Ga<SB>2</SB>O<SB>3</SB>substrate is confirmed to be smooth by an inter-atom microscope (AMF). COPYRIGHT: (C)2006,JPO&NCIPI
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| 申请公布号 |
JP2006032736(A) |
申请公布日期 |
2006.02.02 |
| 申请号 |
JP20040210861 |
申请日期 |
2004.07.16 |
| 申请人 |
KOHA CO LTD |
发明人 |
ICHINOSE NOBORU;SHIMAMURA SEISHI;AOKI KAZUO;GARCIA VILLORA ENCARNACION ANTONIA |
| 分类号 |
H01L21/205;C23C16/34;H01L21/304 |
主分类号 |
H01L21/205 |
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