| 摘要 |
PROBLEM TO BE SOLVED: To break a trade-off relation existent between reduction of on-voltage (or on-resistance) and high breakdown voltage. SOLUTION: In an IGBT, there is formed, between at least partial adjacent trench gate electrodes 32, a plurality of trenches 35 penetrating a body region 26 located therebetween and reaching a drift region 24. A conductor 38 covered with a trench insulating film 38 is embedded in the trenches 35, and there is selectively formed a storage side body contact region 29 in contact with an emitter electrode E within the range of a body region 26a existent between at least one trench gate electrode 32 of the adjacent trench gate electrodes 32 and a trench 35a. The body region 26 in a gap between the trenches 35 makes contact with the emitter electrode via the storage side body contact region 29. COPYRIGHT: (C)2006,JPO&NCIPI
|
