| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device so that a normally-off semiconductor device having low on-state resistance can be manufactured with good yield. SOLUTION: A field effect transistor comprises a carrier transit layer 1 consisting of In<SB>X</SB>Ga<SB>1-X</SB>N (0≤X≤1), and a recess structure 10 laminated on the carrier transit layer 1 and formed by removing a part thereof or a barrier layer 2 consisting of n-type In<SB>Y</SB>Al<SB>Z</SB>Ga<SB>1-Y-Z</SB>N (0<Y≤1, 0<Z≤1). In the transistor, the barrier layer film thickness in the recess structure 10 is≤16.4×(1-1.27×Z+0.68×(Y-X))/(Z-4.66×(Y-X)). COPYRIGHT: (C)2006,JPO&NCIPI
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