| 摘要 |
A method is described which uses a CMP resistant metal layer to replace the upper dielectric layer in the track width definition phase of a TMR or CPP spin valve magnetic head. The metal which is selected to be resistant to the CMP process can be rhodium (Rh), platinum (Pt), chromium (Cr), vanadium (V), etc. The additional CMP resistance of the refill layer structure provides a much larger processing window which results in higher yields. A CPP head according to the invention has a metal layer according to the invention above the hard bias structures on the sides of the sensor which define the track width.
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