发明名称 TOUGH DIAMONDS AND METHOD OF MAKING THEREOF
摘要 A single crystal diamond grown by microwave plasma chemical vapor deposition has a hardness of 50-90 GPa and a fracture toughness of 11-20 MPa m <SUP>1/2</SUP> A method for growing a single crystal diamond includes placing a seed diamond in a holder; and growing single crystal diamond at a temperature of about 1000 °C to about 1100 °C such that the single crystal diamond has a fracture toughness of 11-20 MPa m <SUP>½.</SUP>
申请公布号 WO2005007935(A3) 申请公布日期 2006.02.02
申请号 WO2004US22610 申请日期 2004.07.14
申请人 CARNEGIE INSTITUTION OF WASHINGTON;HEMLEY, RUSSELL, J.;MAO, HO-KWANG;YAN, CHIH-SHIUE 发明人 HEMLEY, RUSSELL, J.;MAO, HO-KWANG;YAN, CHIH-SHIUE
分类号 C30B7/00;C30B21/02;C30B23/00;C30B25/00;C30B25/10;C30B28/06;C30B28/12;C30B28/14;C30B29/04;C30B33/00;C30B33/02;G11B27/034;G11B27/036;G11B27/10;G11B27/11;G11B27/34;H04N5/76;H04N5/765;H04N5/775;H04N5/781;H04N9/804;H04N9/82 主分类号 C30B7/00
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