A single crystal diamond grown by microwave plasma chemical vapor deposition has a hardness of 50-90 GPa and a fracture toughness of 11-20 MPa m <SUP>1/2</SUP> A method for growing a single crystal diamond includes placing a seed diamond in a holder; and growing single crystal diamond at a temperature of about 1000 °C to about 1100 °C such that the single crystal diamond has a fracture toughness of 11-20 MPa m <SUP>½.</SUP>
申请公布号
WO2005007935(A3)
申请公布日期
2006.02.02
申请号
WO2004US22610
申请日期
2004.07.14
申请人
CARNEGIE INSTITUTION OF WASHINGTON;HEMLEY, RUSSELL, J.;MAO, HO-KWANG;YAN, CHIH-SHIUE