发明名称 Voltage providing apparatus for e.g. dynamic random access memory has switching network which couples shared capacitor to respective high and low nodes for selected voltage sources depending on bit organization of semiconductor device
摘要 <p>Voltage sources (VDD,VSS) each coupled between respective high nodes and low nodes. A switching network couples a shared capacitor to the respective high and low nodes for selected voltage sources depending on a bit organization of the semiconductor device.</p>
申请公布号 DE102004059327(A1) 申请公布日期 2006.02.02
申请号 DE20041059327 申请日期 2004.12.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, HYUNG-CHAN;KIM, CHI-WOOK;JEONG, BYUNG-HOON
分类号 G11C7/02;G11C5/00;G11C5/14;G11C11/407;H02M3/07 主分类号 G11C7/02
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