发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To prevent a junction from falling into an electrically opened state caused by the growth of a void in an alloy layer between a metal thin wire and a bonding pad. <P>SOLUTION: Just before a bonding pad 1 contacts and connects with a ball 4 at the head of a metal thin wire 2 which passes the first through hole 3 of a capillary 5, the bonding pad 1 is scratched on the surface by a needlelike protruding object 7 projected from a second through hole 6. Thus, the state of an uneven alloy layer is made to form by losing a part of the bonding pad 1 required for connection so as to prevent a junction from falling into an electrically opened defective state by suppressing the influence by the generated void. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006032532(A) 申请公布日期 2006.02.02
申请号 JP20040207096 申请日期 2004.07.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MATSUSHITA KAZUHIKO
分类号 H01L21/60 主分类号 H01L21/60
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