METHOD FOR IN-SITU FORMING OXIDE AND NITRIDE IN SEMICONDUCTOR DEVICE,申请号KR20020040759-传众专利搜索

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发明名称	METHOD FOR IN-SITU FORMING OXIDE AND NITRIDE IN SEMICONDUCTOR DEVICE
摘要
申请公布号	KR100548550(B1)	申请公布日期	2006.02.02
申请号	KR20020040759	申请日期	2002.07.12
申请人		发明人
分类号	H01L21/324	主分类号	H01L21/324
代理机构		代理人
主权项
地址

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